2D PROCESS SIMULATION OF DOPANT DIFFUSION IN POLYSILICON
- 1 April 1991
- journal article
- Published by Emerald Publishing in COMPEL: The International Journal for Computation and Mathematics in Electrical and Electronic Engineering
- Vol. 10 (4) , 401-410
- https://doi.org/10.1108/eb051716
Abstract
A new model to describe dopant diffusion and recrystallisation in polycrystalline silicon during thermal treatment is presented. The full 3D microstructure of the material is considered and a local homogenisation approximation introduced. A parallel diffusion model for diffusion in grain boundaries and grain interior with grain growth and segregation is developed within this approximation. The model is solved in a 2D vertical section using a finite element discretisation. An example of the application of this model to a one micron bipolar transistor is given.Keywords
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