A physical compact MOSFET model, including quantum mechanical effects, for statistical circuit design applications
- 19 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 937-940
- https://doi.org/10.1109/iedm.1995.499370
Abstract
We present a physical and continuous compact MOSFET model applicable to deep sub-micron devices with very thin gate oxide thicknesses. We focus on the premise that a good compact model should be based on a physical long-channel model that accurately fits both I-V and C-V data. To meet this requirement, we found that the model must account for the correct bias dependency of the surface potential, and include polysilicon depletion and quantum mechanical effects. The resulting model is predictive within a range of the fundamental process parameters, and is thus suitable for statistical circuit simulations.Keywords
This publication has 8 references indexed in Scilit:
- Determination of ultra-thin gate oxide thicknesses for CMOS structures using quantum effectsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Modeling the polysilicon depletion effect and its impact on submicrometer CMOS circuit performanceIEEE Transactions on Electron Devices, 1995
- PCIM: a physically based continuous short-channel IGFET model for circuit simulationIEEE Transactions on Electron Devices, 1994
- A simple model for quantisation effects in heavily-doped silicon MOSFETs at inversion conditionsSolid-State Electronics, 1994
- A charge sheet capacitance model of short channel MOSFETs for SPICEIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 1991
- Carrier transport near the Si/SiO2 interface of a MOSFETSolid-State Electronics, 1989
- A charge-sheet analysis of short-channel enhancement-mode MOSFETsIEEE Journal of Solid-State Circuits, 1986
- A simple two-dimensional model for IGFET operation in the saturation regionIEEE Transactions on Electron Devices, 1977