Calculation of Carrier and Lattice Temperatures Induced in Si and GaAs By Picosecond Laser Pulses
- 1 January 1981
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Optical heating in semiconductors: Laser damage in Ge, Si, InSb, and GaAsJournal of Applied Physics, 1980
- Dynamics of dense laser-induced plasmasPhysical Review B, 1980
- Carrier density dependence of Auger recombinationSolid-State Electronics, 1978
- Auger coefficients for highly doped and highly excited siliconApplied Physics Letters, 1977
- Physics of Semiconductor DevicesPhysics Today, 1970
- Hot-electron emission from n-siliconJournal of Physics and Chemistry of Solids, 1964