Localized epitaxial growth of WSi2 on silicon
- 15 May 1986
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 59 (10) , 3481-3488
- https://doi.org/10.1063/1.336818
Abstract
Epitaxial growth of both tetragonal and hexagonal WSi2 in silicon was investigated by transmission electron microscopy. Eight different modes of WSi2 epitaxy were found to grow in (001), (111), and (011) Si. Variants of WSi2 epitaxy were also observed. Crystallographic analyses were performed to find possible matches between atoms in overlayer and silicon at WSi2/Si interfaces. Interfacial structures were analyzed. The roles of the lattice match in the growth of epitaxial WSi2 and MoSi2, which are similar in various aspects, are explored. The effects of anharmonicity in the interatomic force of overlayer on the heteroepitaxial growth and pseudomorphism are discussed.This publication has 17 references indexed in Scilit:
- Localized epitaxial growth of C54 and C49 TiSi2 on (111)SiApplied Physics Letters, 1985
- Localized epitaxial growth of hexagonal and tetragonal MoSi2 on (111) SiApplied Physics Letters, 1985
- Epitaxial growth of VSi2 on (111) SiJournal of Applied Physics, 1985
- Transition-metal silicides lattice-matched to siliconJournal of Applied Physics, 1985
- The effect of anharmonicity in epitaxial interfacesSurface Science, 1984
- Effects of two-step annealing on the epitaxial growth of CoSi2 on siliconThin Solid Films, 1983
- COHERENT INTERFACES AND MISFIT DISLOCATIONSPublished by Elsevier ,1975
- DEFECTS IN EPITAXIAL DEPOSITSPublished by Elsevier ,1975
- The study of epitaxy in thin surface filmsAdvances in Physics, 1956
- One-dimensional dislocations. I. Static theoryProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1949