Localized epitaxial growth of hexagonal and tetragonal MoSi2 on (111) Si

Publisher Website
Google Scholar
Abstract
Both hexagonal and tetragonal forms of MoSi2 (h‐MoSi2 and t‐MoSi2) were grown epitaxially on (111)Si for the first time. The best epitaxy was obtained in samples annealed at 1050 °C for 1 h. The orientation relationships between epitaxial h‐MoSi2 and Si were determined to be [0001]MoSi2//[111]Si and (202̄0)MoSi2//(202̄)Si whereas those between epitaxial t‐MoSi2 and Si were analyzed to be [110]MoSi2//[111]Si and (004)MoSi2//(2̄02)Si. Regular interfacial dislocations, 100 Å in spacing, were identified to be of edge type with (1)/(6) 〈112〉 Burgers vectors. Preliminary investigations indicated that a number of other technologically important refractory silicides can all be grown epitaxially on silicon. The results present an exciting prospect to fabricate novel classes of devices with desirable characteristics.