Oxygen incorporation in thermal-donor centers in silicon
- 12 October 1987
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 59 (15) , 1702-1705
- https://doi.org/10.1103/physrevlett.59.1702
Abstract
The paper presents for the first time microscopic evidence for the presence of oxygen in thermal donor centers in silicon. The evidence as obtained by electron nuclear double resonance on the magnetic isotope is conclusive.
Keywords
This publication has 10 references indexed in Scilit:
- EPR studies of heat-treatment centers inp-type siliconPhysical Review B, 1987
- Thermal Donors in Silicon: A Study with ENDORPhysical Review Letters, 1986
- Thermal donors in silicon: oxygen clusters or self-interstitial aggregatesJournal of Physics C: Solid State Physics, 1985
- Site Symmetry and Ground-State Characteristics for the Oxygen Donor in SiliconPhysical Review Letters, 1985
- Oxygen-related thermal donors in silicon: A new structural and kinetic modelJournal of Applied Physics, 1984
- Heat—Treatment Centers in Silicon and Their g‐ValuesPhysica Status Solidi (b), 1982
- Application of ENDOR-Induced Electron Spin Resonance to the Study of Point Defects in SolidsPhysica Status Solidi (b), 1980
- EPR spectra of heat-treatment centers in oxygen-rich siliconSolid State Communications, 1978
- EPR Studies in Neutron-Irradiated Silicon: A Negative Charge State of a Nonplanar Five-Vacancy Cluster ()Physical Review B, 1973
- Mechanism of the Formation of Donor States in Heat-Treated SiliconPhysical Review B, 1958