On the Characterization of Silicon Dioxide and Silicon Nitride by Spectroscopic Ellipsometry in the VIS and IR Regions
- 16 April 1991
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 124 (2) , 547-555
- https://doi.org/10.1002/pssa.2211240222
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Ellipsometric Characterization of Layers on Transparent Semiconductor WafersPhysica Status Solidi (b), 1991
- Infrared spectroscopic ellipsometry using a Fourier transform infrared spectrometer: Some applications in thin-film characterizationReview of Scientific Instruments, 1989
- Evaluation of Derivatives of Reflectance and Transmittance by Stratified Structures and Solution of the Reverse Problem of EllipsometryOptica Acta: International Journal of Optics, 1983
- Spectroscopic ellipsometry in the infraredInfrared Physics, 1981
- Principles of the Theory of SolidsPublished by Cambridge University Press (CUP) ,1972