The time-dependence of post-irradiation interface trap build-up in deuterium-annealed oxides (n-MOSFET)
- 1 December 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 39 (6) , 2220-2229
- https://doi.org/10.1109/23.211424
Abstract
No abstract availableThis publication has 32 references indexed in Scilit:
- Effects of hydrogen annealing on MOS oxidesJournal of Electronic Materials, 1992
- The effect of hydrogen on hot carrier radiation immunity of MOS devicesApplied Surface Science, 1989
- The Role of Hydrogen in Radiation-Induced Defect Formation in Polysilicon Gate MOS DevicesIEEE Transactions on Nuclear Science, 1987
- Anomalous isotope-mass effect in lithium borate glasses: Comparison with a unified relaxation modelPhysical Review B, 1984
- SMALL POLARON HOPPING WITHOUT TRAP PARTICIPATION IN DISPERSIVE TRANSIENT TRANSPORT IN SiO2 OF MOS STRUCTURESPublished by Elsevier ,1980
- Non- classical diffusion processesJournal of Nuclear Materials, 1978
- Enhanced Flatband Voltage Recovery in Hardened Thin MOS CapacitorsIEEE Transactions on Nuclear Science, 1978
- Simple approximate solutions to continuous-time random-walk transportPhysical Review B, 1977
- Anomalous transit-time dispersion in amorphous solidsPhysical Review B, 1975
- Quantum Theory of Diffusion with Application to Light Interstitials in MetalsPhysical Review B, 1970