High magnetic field characterisation of (Hg, Cd)Te surface layers
- 1 January 1988
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 86 (1-4) , 656-666
- https://doi.org/10.1016/0022-0248(90)90791-i
Abstract
No abstract availableKeywords
This publication has 20 references indexed in Scilit:
- Subbands in Space-Charge Layers on Narrow Gap Semiconductors: Validity of Semiclassical ApproximationJournal of the Physics Society Japan, 1985
- Conductivity studies for an electron surface layer onTePhysical Review B, 1985
- Surface characterization of Hg0.7Cd0.3Te native oxidesJournal of Vacuum Science & Technology A, 1985
- Hall effect and resistivity in liquid-phase-epitaxial layers of HgCdTeJournal of Applied Physics, 1984
- The MIS physics of the native oxide–Hg1−xCdxTe interfaceJournal of Vacuum Science and Technology, 1982
- Optical and field effect studies of the Hg0.7Cd0.3 Te–anodic oxide interfaceJournal of Vacuum Science and Technology, 1982
- Electronic properties of two-dimensional systemsReviews of Modern Physics, 1982
- Anodic Oxide Films on Hg1 − x Cd x TeJournal of the Electrochemical Society, 1979
- Long-term Hall-type conversion by vacancy diffusion in Hg1−xCdxTe at room temperatureApplied Physics Letters, 1979
- Quantized Surface States of a Narrow-Gap SemiconductorJournal of the Physics Society Japan, 1974