Effects of Channel Mobility on SiC Power Metal-Oxide-Semiconductor Field Effect Transistor Performance
- 1 June 1996
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 35 (6R) , 3331
- https://doi.org/10.1143/jjap.35.3331
Abstract
The performance of 6H- and 4H-SiC power metal-oxide-semiconductor field effect transistors (MOSFETs) has been theoretically studied, taking account of channel resistances and mobility anisotropy. For low-voltage (500 V) devices, a channel mobility higher than 50 cm2/Vs is required to ensure that SiC power MOSFETs are practical.Keywords
This publication has 4 references indexed in Scilit:
- SiC devices: physics and numerical simulationIEEE Transactions on Electron Devices, 1994
- Conductivity Anisotropy in Epitaxial 6H and 4H SicMRS Proceedings, 1994
- CVD growth and characterization of single-crystalline 6H silicon carbidePhysica B: Condensed Matter, 1993
- Comparison of 6H-SiC, 3C-SiC, and Si for power devicesIEEE Transactions on Electron Devices, 1993