Temperature Dependence of Lasing Characteristics of InGaAsP/InP Distributed Feedback Lasers in 1.5 µm Range
- 1 December 1982
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 21 (12R)
- https://doi.org/10.1143/jjap.21.1736
Abstract
The temperature dependence of the lasing characteristics of InGaAsP/InP distributed feedback injection lasers in the 1.5 µm wavelength range is presented. The threshold current density is expressed phenomenologically using the characteristic temperature T 0 of a Fabry-Perot laser and a spectral gain distribution of Gaussian type, which almost agreed with the experimental results in the temperature range of constant T 0. The temperature coefficient of the lasing wavelength was found to be 1.0 Å/K experimentally and calculations taking into account the effect of carrier density could explain this value well. It was also shown that a TM output also appeared in the low-temperature range even if only TE modes were observed at room temperature and at higher temperatures.Keywords
This publication has 15 references indexed in Scilit:
- Low-threshold-current distributed-feedback InGaAsP/InP CW lasersElectronics Letters, 1982
- CW operation of DFB-BH GaInAsP/InP lasers in 1.5 μm wavelength regionElectronics Letters, 1982
- Room-temperature CW operation of distributed-feedback buried-heterostructure InGaAsP/InP lasers emitting at 1.57 μmElectronics Letters, 1981
- 1.55 µm GaInAsP/InP Distributed Feedback LasersJapanese Journal of Applied Physics, 1981
- InGaAsP/InP double-heterostructure lasers: Simple expressions for wave confinement, beamwidth, and threshold current over wide ranges in wavelength (1.1-1.65 µm)IEEE Journal of Quantum Electronics, 1981
- Gain spectra in GaInAsP/InP proton-bombarded stripe-geometry DH lasersIEEE Journal of Quantum Electronics, 1981
- GaxIn1-xAsyP1-y/InP injection laser partially loaded with first-order distributed Bragg reflectorIEEE Journal of Quantum Electronics, 1979
- Lasing characteristics of distributed-feedback GaAs-GaAlAs diode lasers with separate optical and carrier confinementIEEE Journal of Quantum Electronics, 1976
- GaAs GaAlAs double-heterostructure injection lasers with distributed feedbackIEEE Journal of Quantum Electronics, 1975
- Refractive index of n-type gallium arsenideJournal of Applied Physics, 1973