1.55 µm GaInAsP/InP Distributed Feedback Lasers
- 1 July 1981
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 20 (7) , L488
- https://doi.org/10.1143/jjap.20.l488
Abstract
Room temperature operation of 1.55 µm GaInAsP/InP distributed feedback lasers is reported. The laser was fabricated by a single LPE growth cycle on a corrugated substrate. Single longitudinal and transverse mode oscillation was observed up to 1.7 times the threshold current. The temperature dependence of lasing wavelength was about 0.09 nm/deg.Keywords
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