Effects of ion implantation on the structure of amorphous germanium
- 15 April 1978
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 32 (8) , 466-468
- https://doi.org/10.1063/1.90110
Abstract
We have investigated the structure of amorphous Ge films with 10‐keV Ge74 ions. An analysis and subsequent comparison of the elastically scattered electron intensity from ion‐implanted amorphous films with relaxed and unrelaxed model calculations using the Polk random network model suggests that ion implantation introduces isolated point defects (vacancies) in the network.Keywords
This publication has 6 references indexed in Scilit:
- Relaxed continuous random network models (II)Journal of Non-Crystalline Solids, 1975
- Relaxed continuous random network modelsJournal of Non-Crystalline Solids, 1974
- A Scanning Electron Diffraction Study of Vapor‐Deposited and Ion Implanted Thin Films of Ge (II)Physica Status Solidi (b), 1973
- A Scanning Electron Diffraction Study of Vapor‐Deposited and Ion Implanted Thin Films of Ge (I)Physica Status Solidi (b), 1973
- An Electron Microscope Investigation of the Structure of Some Amorphous MaterialsPhysica Status Solidi (b), 1972
- Structural model for amorphous silicon and germaniumJournal of Non-Crystalline Solids, 1971