High gain lateral bipolar transistor
- 6 January 2003
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Characterization of a high-resolution novolak based negative electron-beam resist with 4 μC/cm2 sensitivityJournal of Vacuum Science & Technology B, 1988
- An SOI voltage-controlled bipolar-MOS deviceIEEE Transactions on Electron Devices, 1987
- A lateral silicon-on-insulator bipolar transistor with a self-aligned base contactIEEE Electron Device Letters, 1987