Electrically active defects in liquid phase epitaxial interfaces in the In0.53Ga0.47As/InP system
- 2 May 1987
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 83 (2) , 219-232
- https://doi.org/10.1016/0022-0248(87)90011-x
Abstract
No abstract availableKeywords
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