A Capacitance Investigation of InGaAs/InP Isotype Heterojunction

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Abstract
We have measured deep levels near the InGaAs/InP heterointerface by DLTS and C-V method. Three deep levels, E1, E2 and E3, have been found near the heterointerface, whose activation energies are 0.17 eV, 0.37 eV and 0.54 eV, respectively. The concentrations of E2 and E3 rapidly decrease when approaching the heterointerface from the InP, indicating that the two levels are located only in the InP substrate. The E1 level, on the other hand, can be found only near the heterointerface. The density of the E1 level is well correlated with the interface charge density which is determined by the C-V analysis. Both of the densities are dependent on the degree of the lattice mismatch between the InGaAs epitaxial layer and the InP substrate.