Low temperature doping of arsenic atoms in silicon during Pd2Si formation
- 1 March 1982
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 89 (4) , 349-354
- https://doi.org/10.1016/0040-6090(82)90307-8
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Low-temperature redistribution of As in Si during Pd2Si formationApplied Physics Letters, 1981
- Ion beam modification of silicide-silicon interfacesRadiation Effects, 1980
- The redistribution of implanted dopants after metal-silicide formationJournal of Applied Physics, 1978
- Solid Solubilities of Impurity Elements in Germanium and Silicon*Bell System Technical Journal, 1960