Treatment of Ionized Impurity Scattering in Degenerate Semiconductors. Application of the Variational Technique in the Partial-Wave Method
- 15 May 1962
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 126 (4) , 1436-1440
- https://doi.org/10.1103/physrev.126.1436
Abstract
Using the partial-wave method, ionized impurity scattering in degenerate semiconductors is discussed. It is shown that the scattering process is adequately described by considering only the zeroth-order phase shift. By making use of Kohn's variational principle this quantity is determined analytically and an analytical formula is derived for the resistivity due to ionized impurity scattering alone.Keywords
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