Properties of a new a-Si:H-like material: hydrogenated polymorphous silicon
- 1 May 1998
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 227-230, 96-99
- https://doi.org/10.1016/s0022-3093(98)00217-8
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Optical-bias effect on transient electron-drift measurements in-Si:H: Implications on the distribution and capture cross sections of the dangling bondsPhysical Review B, 1996
- Low band gap amorphous silicon deposited under He dilution in the γ regime of an rf glow discharge: properties and stabilityJournal of Non-Crystalline Solids, 1996
- Applications of the Modulated Photocurrent Technique to the Determination of Gap States Characteristics in Hydrogenated Amorphous SiliconSolid State Phenomena, 1995
- A fully automated hot-wall multiplasma-monochamber reactor for thin film depositionJournal of Vacuum Science & Technology A, 1991
- On the mechanism of doping and defect formation in a-Si: HPhilosophical Magazine Part B, 1991
- Photoconductivity and μτ-products in a-Si:H — compatibility with various defect modelsJournal of Non-Crystalline Solids, 1991