Low band gap amorphous silicon deposited under He dilution in the γ regime of an rf glow discharge: properties and stability
- 1 May 1996
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 198-200, 1067-1071
- https://doi.org/10.1016/0022-3093(96)00043-9
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Highly photosensitive helium diluted amorphous silicon 1.5 eV band gap: Role of pressureJournal of Applied Physics, 1995
- Substrate temperature effect on the stability of hydrogenated amorphous silicon films deposited at high ratesJournal of Applied Physics, 1995
- Improvement in the properties of a-SiGe:H films: Roles of deposition rate and hydrogen dilutionJournal of Applied Physics, 1993
- Spatially resolved optical emission and electrical properties of SiH4RF discharges at 13.56 MHz in a symmetric parallel-plate configurationJournal of Physics D: Applied Physics, 1991