Towards Si1−xGex quantum-well resonant-state terahertz laser
- 10 December 2001
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 79 (24) , 3909-3911
- https://doi.org/10.1063/1.1423771
Abstract
We report on the experimental evidence for terahertz (THz) lasing of boron-doped strained Si 1−x Ge x quantum-well structures. The lasing arises under strong electric fields (300–1500 V/cm) applied parallel to interfaces. The spectrum of THz stimulated emission is presented showing the lasing wavelength near 100 μm and the modal structure caused by a resonator. The mechanism of population inversion is based on the formation of resonant acceptor states in strained SiGe layer.Keywords
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