High-speed response of a quasi-graded band-gap superlattice p-i-n photodiode
- 13 October 1986
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 49 (15) , 939-941
- https://doi.org/10.1063/1.97490
Abstract
The photoresponse to a short optical pulse of a GaAs p‐n junction containing an undoped asymmetric GaAs/AlAs superlattice is reported. The response to a light pulse of <400 fs duration has been measured and a rise time of 80 ps is observed. The trailing edge of the response exhibits a long time tail, which is thought to be dominated by the time taken to tunnel through the thickest barrier, being the Γ‐Γ separation of the GaAs and AlAs of a 3‐nm barrier.Keywords
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