Contamination of silicon during ion-implantation and annealing
Open Access
- 1 May 1998
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 227-230, 407-410
- https://doi.org/10.1016/s0022-3093(98)00175-6
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- Amorphous Solid without Low Energy ExcitationsPhysical Review Letters, 1997
- Internal Friction in Ion-Implanted SiliconMRS Proceedings, 1997
- Transient enhanced diffusion without {311} defects in low energy B+-implanted siliconApplied Physics Letters, 1995
- Elastic Properties of Thin FilmsMRS Proceedings, 1994
- Low temperature mechanical properties of boron-doped siliconPhysical Review Letters, 1992
- Boron contamination of surfaces in silicon microelectronics processing: Characterization and causesJournal of Vacuum Science & Technology A, 1991
- Deposition of device quality, low H content amorphous siliconJournal of Applied Physics, 1991
- Critical conductivity exponent for Si:BPhysical Review Letters, 1991
- Diffusion, Complexing and Precipitation of Transition Metals in SiliconMRS Proceedings, 1984