Model of phonon-associated electron tunneling through a semiconductor double barrier
- 24 July 1989
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 63 (4) , 418-421
- https://doi.org/10.1103/physrevlett.63.418
Abstract
We propose an approach to study one-dimensional electron tunneling in an arbitrarily shaped barrier in the presence of electron-optical phonon scattering. An independent-boson model is used for the electron-phonon interaction. Our result for a double-barrier structure shows the occurrence of phonon-assisted resonant tunneling.Keywords
This publication has 15 references indexed in Scilit:
- Quantum tunnelling in a dissipative systemPublished by Elsevier ,2004
- Tunneling in the presence of phonons: A solvable modelPhysical Review Letters, 1989
- Quantum-mechanical resonant tunneling in the presence of a boson fieldPhysical Review B, 1989
- Resonant Tunneling with Electron-Phonon Interaction: An Exactly Solvable ModelPhysical Review Letters, 1988
- Phonon-assisted resonant tunnelingSolid State Communications, 1988
- Evidence for LO-phonon-emission-assisted tunneling in double-barrier heterostructuresPhysical Review B, 1987
- Quantum Tunneling Rates for Asymmetric Double-Well Systems with Ohmic DissipationPhysical Review Letters, 1985
- Quantum Tunneling in Dissipative Systems at Finite TemperaturesPhysical Review Letters, 1984
- Influence of Dissipation on Quantum Tunneling in Macroscopic SystemsPhysical Review Letters, 1981
- Resonant Energy Transfer between Localized Electronic States in a CrystalPhysical Review B, 1971