Rheed intensity analysis of Si(111)7 × 7 at one-beam condition
- 31 December 1987
- journal article
- Published by Elsevier in Surface Science
- Vol. 192 (2-3) , L893-L898
- https://doi.org/10.1016/s0039-6028(87)81122-6
Abstract
No abstract availableKeywords
This publication has 24 references indexed in Scilit:
- Si(111)-7×7 surface: Energy-minimization calculation for the dimer–adatom–stacking-fault modelPhysical Review B, 1987
- Normal Displacements on a Reconstructed Silicon (111) Surface: An X-Ray-Standing-Wave StudyPhysical Review Letters, 1986
- Atomic and electronic contributions to Si(111)-(7×7) scanning-tunneling-microscopy imagesPhysical Review B, 1986
- Measurement of the silicon (111) surface contractionPhysical Review Letters, 1986
- Real-Space Observation of Surface States on Si(111) 7×7 with the Tunneling MicroscopePhysical Review Letters, 1985
- Tunneling Images of Atomic Steps on the Si(111)7×7 SurfacePhysical Review Letters, 1985
- Analytical Formura of Imaginary Crystal Potential for Fast ElectronsJapanese Journal of Applied Physics, 1985
- Restricted role of experiments in real space in determination of the Si(111)7×7 reconstructed structurePhysical Review B, 1985
- Si(111) 7©7 reconstruction: Strain in the adatom modelPhysical Review B, 1984
- Structure Analysis of the Si(111)7 × 7 Surface by Low-Energy Ion ScatteringPhysical Review Letters, 1983