Measurement of the silicon (111) surface contraction

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Abstract
Distinct differences have been found in the response of LVV and KLL Auger yields from 7×7 and 1×1 Si(111) surfaces probed with x-ray standing-wave excitations. By the taking into account of the shorter mean free path of the LVV electrons, the differences can be explained by a contraction of the top two (111) atom planes by approximately 0.5 Å. This agrees well with earlier analyses of ion-scattering measurements, but such a contraction has not been detected in other surface measurements or predicted by pseudopotential calculations. Current stacking-fault models of the 7×7 reconstruction may require modification in order to be consistent with these standing-wave measurements.