"Surface Dislocation" Process for Surface Reconstruction and Its Application to the Silicon (111) 7×7 Reconstruction
- 18 July 1983
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 51 (3) , 199-202
- https://doi.org/10.1103/physrevlett.51.199
Abstract
The silicon (111) 7×7 surface reconstruction has been observed by surface-sensitive transmission-electron microscopy. The topography of the reconstructed surface is accounted for by the cooperative motion of surface atoms over large areas via a new process involving the generation of "surface dislocations" to relieve the backbond-induced surface stresses.Keywords
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