Observation of atomic steps of (111) surface of a silicon crystal using bright field electron microscopy
- 31 December 1981
- journal article
- Published by Elsevier in Ultramicroscopy
- Vol. 6 (1) , 41-52
- https://doi.org/10.1016/s0304-3991(81)80176-3
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Reflection electron microscopy of clean and gold deposited (111) silicon surfacesSurface Science, 1980
- Darkfield and brightfield techniques for electron microscopic observation of atomic steps on MgO single-crystal surfacesUltramicroscopy, 1979
- Forbidden 200 diffraction spots in siliconPhilosophical Magazine Part B, 1978
- Surface structure and surface lattice constant of (001) vapor deposited Au films using high resolution transmission electron microscopySurface Science, 1976
- Phase contrast electron microscopy of amorphous specimens supported on thin crystalsPhilosophical Magazine, 1975
- Direct resolution of surface atomic steps by transmission electron microscopyPhilosophical Magazine, 1974
- Out-of-zone effects in dynamic electron diffraction intensities from goldActa Crystallographica Section A, 1971
- The observation of primary step growth in magnesium oxide by direct transmission electron microscopyPhilosophical Magazine, 1967