BeTe/ZnSe graded band gap ohmic contacts to p-ZnSe
- 18 April 1994
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (16) , 2148-2150
- https://doi.org/10.1063/1.111684
Abstract
BeTe is not a very well known wide‐band semiconductor. Due to the close lattice match to GaAs and ZnSe and p‐type as‐grown character, BexZn1−xTexSe1−x graded band‐gap layers appear an ideal candidate for ohmic contact to p‐type ZnSe based semiconductors. These contacts allow for an implementation of epitaxial structures of II‐VI compound diode lasers entirely lattice matched to the GaAs substrate. The numerical calculations predict contact resistivity of BexZn1−xTexSe1−x graded gap contacts lower than ρc=10−4 Ω cm2 at acceptor doping level 1×1018 cm−3, which corresponds to a voltage drop across the contact layer of less than 0.1 V during lasing operation.Keywords
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