An AlGaAs/InGaAs pseudomorphic HEMT modulator driver IC with low power dissipation for 10 Gb/s optical transmission systems
- 23 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 3 (0149645X) , 1433-1436
- https://doi.org/10.1109/mwsym.1996.512205
Abstract
An optical modulator driver IC has been developed for 10 Gb/s optical communication systems. In order to realize both high frequency operation and low power dissipation, 0.2-/spl mu/m T-shaped gate AlGaAs/InGaAs pseudomorphic HEMTs, which give large transconductance, g/sub m/, of 610 mS/mm and high cut-off frequency, f/sub T/, of 67.5 GHz, have been employed. In addition, by using a current mirror circuit with cascode configuration as high impedance current source, power dissipation of 1.1 W is achieved at a 10 Gb/s NRZ signal output with 3 V/sub p-p/. This dissipation is the lowest value ever reported. As an additional function, the output voltage swing can be controlled from 2 to 3.3 V/sub p-p/ by the current mirror circuit in order to adjust the duty factor of optical output signal through an optical modulator.Keywords
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