Energetic Electron Beam Induced Recrystallization of Ion Implantation Damage in Semiconductors

This publication has 9 references indexed in Scilit:

• Solid-phase epitaxy of amorphous silicon induced by electron irradiation at room temperature
  Physical Review B, 1987
• The HVEM-Tandem Accelerator Facility at Argonne National Laboratory
  Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
• Ion-beam-induced crystallization and amorphization of silicon
  Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
• Dominant Influence of Beam-Induced Interface Rearrangement on Solid-Phase Epitaxial Crystallization of Amorphous Silicon
  Physical Review Letters, 1985
• High resolution and in situ investigation of defects in Bi-irradiated Si
  Philosophical Magazine A, 1984
• Annealing studies of ion-implanted gaas in the 40–300 K range
  Radiation Effects, 1982
• The subthreshold radiation effects in semiconductors
  Physica Status Solidi (a), 1975
• On the temperature rise in electron irradiated foils
  Radiation Effects, 1970
• Messung der Energie zur Verlagerung eines Gitteratoms durch Elektronensto in AIIIBV-Verbindungen *
  The European Physical Journal A, 1963