High resolution and in situ investigation of defects in Bi-irradiated Si
- 1 November 1984
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine A
- Vol. 50 (5) , 667-675
- https://doi.org/10.1080/01418618408237526
Abstract
High resolution and in situ transmission electron microscopy (TEM) studies give complementary results for the structural characteristics of defect clusters. The former confirm the amorphous nature of defect. cluster cores formed directly in individual demage cascades. The size and the number of the clusters is determined. The longterm stability of these damaged zones is shown to depend on the energy of the electron beam used in the TEM observations.Keywords
This publication has 10 references indexed in Scilit:
- Transmission electron microscopy study of ion implantation induced Si amorphizationNuclear Instruments and Methods in Physics Research, 1983
- The crystalline to amorphous transformation in siliconNuclear Instruments and Methods in Physics Research, 1983
- In Situ Study of Implantation-Induced Silican AmorphisationIEEE Transactions on Nuclear Science, 1983
- Ion damage to silicon crystals inside an electron microscopePhysica Status Solidi (a), 1981
- Features of collision cascades in silicon as determined by transmission electron microscopyNuclear Instruments and Methods, 1981
- High density cascade effectsRadiation Effects, 1981
- Collision cascades in siliconNuclear Instruments and Methods, 1980
- Transmission Electron Microscope Investigations Of Defects Produced By Individual Displacement Cascades In Si And GeJournal of Microscopy, 1980
- Radiation-induced processes in experiments carried out in-situ in the high-voltage electron microscopePhysica Status Solidi (a), 1979
- Energy density and time constant of heavy-ion-induced elastic-collision spikes in solidsApplied Physics Letters, 1974