Metalorganic Vapor Phase Epitaxy of CuGa(SxSe1-x)2 Lattice-Matched to GaP (100)
- 1 March 1991
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 30 (3B) , L437
- https://doi.org/10.1143/jjap.30.l437
Abstract
CuGa(S x Se1-x )2 epitaxial layers were grown on GaP (100) substrates by metalorganic vapor phase epitaxy. The alloy composition of the grown layers was controlled by the transport rates of H2S and H2Se. A dramatic improvement in the crystalline quality of the CuGa(S x Se1-x )2 layer lattice-matched to the substrate was evidenced by the narrow linewidth of the double-crystal X-ray rocking curve and the smooth surface. The lattice-matching conditions can be discussed in terms of crystal orientation, lattice parameter and thermal expansion coefficient.Keywords
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