High-Performance Hydrogenated Amorphous Silicon-Germanium Solar Cells Fabricated by Photochemical Vapor Deposition
- 1 July 1987
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 26 (7R)
- https://doi.org/10.1143/jjap.26.1107
Abstract
High-quality a-SiGe:H films have been prepared by photochemical vapor deposition (photo-CVD) with a high dilution ratio of H2. Films with a bandgap of 1.55 eV has a photoconductivity of 1.6×10-4 S/cm (AM1, 100 mW/cm2). Solar cells of the p-i-n type were fabricated by applying such high-quality a-SiGe:H films to the i-layer. The performance of a-SiGe:H solar cells has been drastically improved by introducing graded-bandgap layers at the p/i and i/n hetero-interfaces. At present, a conversion efficiency of 8.65% with high collection efficiencies in the long-wavelength region has been achieved with 1.57 eV bandgap material.Keywords
This publication has 3 references indexed in Scilit:
- Amorphous silicon p-i-n solar cells with graded interfaceApplied Physics Letters, 1986
- Preparation of highly photosensitive hydrogenated amorphous Si-Ge alloys using a triode plasma reactorApplied Physics Letters, 1985
- A novel structure, high conversion efficiency p-SiC/graded p-SiC/i-Si/n-Si/metal substrate-type amorphous silicon solar cellJournal of Applied Physics, 1984