Dynamics of deep level trapping in space charge regions
- 31 January 1990
- journal article
- research article
- Published by Elsevier in Solid-State Electronics
- Vol. 33 (1) , 139-142
- https://doi.org/10.1016/0038-1101(90)90019-b
Abstract
No abstract availableThis publication has 16 references indexed in Scilit:
- Dielectric spectroscopy of silicon barrier devicesSolid-State Electronics, 1988
- Spectroscopy of delayed electronic transitions in GaAs Schottky diodesSemiconductor Science and Technology, 1987
- Effect of the capture coefficient in deep-level transient spectroscopy measurementsJournal of Applied Physics, 1987
- Determination of trapping dynamics of semi-insulating GaAs by frequency-dependent photoconductivitySemiconductor Science and Technology, 1987
- Admittance spectroscopy of silicon Zener diodesSemiconductor Science and Technology, 1986
- Dielectric spectroscopy of semi-insulating gallium arsenideSemiconductor Science and Technology, 1986
- Nonexponential Relaxation of Conductance near Semiconductor InterfacesPhysical Review Letters, 1985
- The time dependence of luminescence in solidsJournal of Physics C: Solid State Physics, 1984
- Electrical properties of platinum in siliconJournal of Applied Physics, 1979
- Deep-level transient spectroscopy: A new method to characterize traps in semiconductorsJournal of Applied Physics, 1974