Dielectric spectroscopy of silicon barrier devices
- 31 August 1988
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 31 (8) , 1277-1288
- https://doi.org/10.1016/0038-1101(88)90427-3
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Spectroscopy of delayed electronic transitions in GaAs Schottky diodesSemiconductor Science and Technology, 1987
- Determination of trapping dynamics of semi-insulating GaAs by frequency-dependent photoconductivitySemiconductor Science and Technology, 1987
- Admittance spectroscopy of silicon Zener diodesSemiconductor Science and Technology, 1986
- Dielectric spectroscopy of semi-insulating gallium arsenideSemiconductor Science and Technology, 1986
- Evidence from dielectric spectroscopy for electronic phase transitions in SI GaAsJournal of Physics C: Solid State Physics, 1985
- Electrical properties of platinum in siliconJournal of Applied Physics, 1979
- Deep-level transient spectroscopy: A new method to characterize traps in semiconductorsJournal of Applied Physics, 1974
- Application of the transmission line equivalent circuit model to the analysis of the PN junction admittance under d.c. biasSolid-State Electronics, 1973
- Admittance of p-n junctions containing trapsSolid-State Electronics, 1972
- Effects of deep impurities on n+p junction reverse-biased small-signal capacitanceSolid-State Electronics, 1968