Application of the transmission line equivalent circuit model to the analysis of the PN junction admittance under d.c. bias

This publication has 17 references indexed in Scilit:

• Admittance of p-n junctions containing traps
  Solid-State Electronics, 1972
• Small-signal equivalent π networks for carrier generation–recombination–trapping at imperfection centres in semiconductors
  Electronics Letters, 1971
• ACCURATE CAPACITANCE CALCULATIONS FOR PN JUNCTIONS CONTAINING TRAPS
  Applied Physics Letters, 1971
• The equivalent circuit model in solid-state electronics—III
  Solid-State Electronics, 1970
• Application of the distributed equilibrium equivalent circuit model to semiconductor junctions
  IEEE Transactions on Electron Devices, 1969
• Exact analytical solution of high frequency lossless MOS capacitance-voltage characteristics and validity of charge analysis
  Solid-State Electronics, 1969
• Effects of deep impurities on n+p junction reverse-biased small-signal capacitance
  Solid-State Electronics, 1968
• The equivalent circuit model in solid-state electronics—Part II: The multiple energy level impurity centers
  Proceedings of the IEEE, 1967
• Frequency dependence of the reverse-biased capacitance of gold-doped silicon P⁺N step junctions
  IEEE Transactions on Electron Devices, 1964
• Einkristalle undpn-Schichtkristalle aus Silizium
  The European Physical Journal A, 1954