Wet oxidation of AlxGa1−xAs: Temporal evolution of composition and microstructure and the implications for metal-insulator-semiconductor applications
- 5 May 1997
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 70 (18) , 2443-2445
- https://doi.org/10.1063/1.118897
Abstract
Three important processes dominate the wet thermal oxidation of AlxGa1−xAs on GaAs: (1) oxidation of Al and Ga in the AlxGa1−xAs alloy to form an amorphous oxide, (2) formation and elimination of crystalline and amorphous elemental As and of amorphous As2O3, and (3) crystallization of the amorphous oxide film. Residual As can lead to strong Fermi-level pinning at the oxidized AlGaAs/GaAs interface, up to a 100-fold increase in leakage current, and a 30% increase in the dielectric constant of the oxide layer. Thermodynamically favored interfacial As may impose a fundamental limitation on the use of AlGaAs wet oxidation in metal-insulatorsemiconductor devices in the GaAs material system.Keywords
This publication has 8 references indexed in Scilit:
- Microstructure of laterally oxidized AlxGa1−xAs layers in vertical-cavity lasersApplied Physics Letters, 1996
- Quasistatic and high frequency capacitance–voltage characterization of Ga2O3–GaAs structures fabricated by in situ molecular beam epitaxyApplied Physics Letters, 1996
- AlxGa1−xAs–GaAs metal–oxide semiconductor field effect transistors formed by lateral water vapor oxidation of AlAsApplied Physics Letters, 1995
- The continuing drama of the semiconductor interfacePhilosophical Transactions A, 1993
- Hydrolyzation oxidation of AlxGa1−xAs-AlAs-GaAs quantum well heterostructures and superlatticesApplied Physics Letters, 1990
- Oxide‐Substrate and Oxide‐Oxide Chemical Reactions in Thermally Annealed Anodic Films on GaSb , GaAs , and GaPJournal of the Electrochemical Society, 1980
- GaAs Oxidation and the Ga‐As‐O Equilibrium Phase DiagramJournal of the Electrochemical Society, 1980
- Raman scattering from anodic oxide-GaAs interfacesApplied Physics Letters, 1979