Improved ultraviolet quantum efficiency using a semitransparent recessed window AlGaN/GaN heterojunction p-i-n photodiode
- 18 October 1999
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 75 (16) , 2421-2423
- https://doi.org/10.1063/1.125034
Abstract
We report on the improved quantum efficiency of GaN-based ultraviolet heterojunction photodiodes using a semitransparent recessed window device structure. At a reverse bias of −5 V the quantum efficiency was ∼57% at the band edge, and remained relatively flat down to ∼330 nm after which some absorption in the p-AlGaN layer became evident. The quantum efficiency only gradually declines after this point, remaining >20% at 280 nm. We attribute these results to avoidance of the optical dead space at the surface of GaN homojunction p-i-ns. The semitransparent p-AlGaN layer was comparatively resistive, causing an electric field crowding effect which resulted in a spatially nonuniform temporal behavior.Keywords
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