Very high-speed ultraviolet photodetectors fabricated on GaN
- 1 March 1999
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 28 (3) , 325-333
- https://doi.org/10.1007/s11664-999-0035-9
Abstract
No abstract availableKeywords
This publication has 19 references indexed in Scilit:
- Comprehensive characterization of metal–semiconductor–metal ultraviolet photodetectors fabricated on single-crystal GaNJournal of Applied Physics, 1998
- Low dark current pin ultraviolet photodetectorsfabricated on GaN grown bymetal organic chemical vapour depositionElectronics Letters, 1998
- Low noise p-π-n GaN ultraviolet photodetectorsApplied Physics Letters, 1997
- High speed, low noise ultraviolet photodetectors based on GaN p-i-n and AlGaN(p)-GaN(i)-GaN(n)structuresApplied Physics Letters, 1997
- Schottky barrier detectors on GaN for visible–blind ultraviolet detectionApplied Physics Letters, 1997
- High responsitivity intrinsic photoconductors based on AlxGa1−xNApplied Physics Letters, 1996
- Electric breakdown in GaN p-n junctionsApplied Physics Letters, 1996
- Analysis of deep levels in n-type GaN by transient capacitance methodsJournal of Applied Physics, 1994
- High-responsivity photoconductive ultraviolet sensors based on insulating single-crystal GaN epilayersApplied Physics Letters, 1992
- Microplasmas in SiliconPhysical Review B, 1957