Low dark current pin ultraviolet photodetectorsfabricated on GaN grown bymetal organic chemical vapour deposition
- 2 April 1998
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 34 (7) , 692-694
- https://doi.org/10.1049/el:19980453
Abstract
The authors report GaN pin photodetectors with very low dark currents (< 10 pA at –10 V), and high external quantum efficiencies (~35%). These photodetectors have a flat responsivity above the bandgap (measured at ~0.10 A/W) with a sharp, solar-blind cutoff at the band edge.Keywords
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