Optimized CMOS infrared detector microsystems
- 19 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
We fabricated and characterized four different CMOS thermoelectric infrared radiation sensor microsystems. The performance of these systems was modelled with the finite element simulation package SOLIDIS, based on measured materials properties. The agreement with experiment was better than 7.5%. Based on this validation we optimized the design parameters of such microsystems.Keywords
This publication has 3 references indexed in Scilit:
- Process-dependent Thermophysical Properties Of CMOS IC Thin FilmsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- CMOS membrane infrared sensors and improved TMAHW etchantPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- High-sensitivity radiation thermopiles made of BiSbTe filmsSensors and Actuators A: Physical, 1991