Radiation hardness of diamond and silicon sensors compared
- 30 August 2007
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 204 (9) , 3004-3010
- https://doi.org/10.1002/pssa.200776327
Abstract
The radiation hardness of silicon charged particle sensors is compared with single crystal and polycrystalline diamond sensors, both experimentally and theoretically. It is shown that for Si‐ and C‐sensors, the NIEL hypothesis, which states that the signal loss is proportional to the Non‐Ionizing Energy Loss, is a good approximation to the present data. At incident proton and neutron energies well above 0.1 GeV the radiation damage is dominated by the inelastic cross section, while at non‐relativistic energies the elastic cross section prevails. The smaller inelastic nucleon‐carbon cross section and the light nuclear fragments imply that at high energies diamond is an order of magnitude more radiation hard than silicon, while at energies below 0.1 GeV the difference becomes significantly smaller.Keywords
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