HILLOCKS AS STRUCTURAL MARKERS FOR ELECTROMIGRATION RATE MEASUREMENTS IN THIN FILMS
- 15 April 1971
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 18 (8) , 344-346
- https://doi.org/10.1063/1.1653690
Abstract
A simple experiment is presented to measure the rate of solute mass transport (electromigration) in dilute alloy thin‐film conductors. A structural marker motion method was employed to determine the rate of copper movement (average ion velocity=4.5×10−8 cm/sec) in Al–Cu thin films during electrical stress (4.7×105 A/cm2 at 150 °C ambient temperature).Keywords
This publication has 10 references indexed in Scilit:
- Reduction of Electromigration in Aluminum Films by Copper DopingIBM Journal of Research and Development, 1970
- Electromigration in Thin Al FilmsJournal of Applied Physics, 1969
- RESISTANCE MONITORING AND EFFECTS OF NONADHESION DURING ELECTROMIGRATION IN ALUMINUM FILMSApplied Physics Letters, 1968
- DIRECT TRANSMISSION ELECTRON MICROSCOPE OBSERVATION OF ELECTROTRANSPORT IN ALUMINUM THIN FILMSApplied Physics Letters, 1967
- NMR MEASUREMENT OF THE DIFFUSION COEFFICIENT OF PURE ALUMINUMApplied Physics Letters, 1967
- ELECTROMIGRATION EFFECTS IN ALUMINUM FILM ON SILICON SUBSTRATESApplied Physics Letters, 1967
- SOME OBSERVATIONS ON THE ELECTROMIGRATION IN ALUMINUM FILMSApplied Physics Letters, 1967
- Electromigration and void observation in silverJournal of Physics and Chemistry of Solids, 1966
- Current-induced mass transport in aluminumJournal of Physics and Chemistry of Solids, 1964
- Current-induced marker motion in gold wiresJournal of Physics and Chemistry of Solids, 1961