High-Resolution Electron Microscope Study of Silicon on Insulator Structure Grown by Lateral Solid Phase Epitaxy
- 1 October 1986
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 25 (10A) , L814
- https://doi.org/10.1143/jjap.25.l814
Abstract
Structural study of L-SPE grown (100)Si/SiO2 interface after high temperature annealing in Ar has been carried out using HRTEM. On an atomic scale the roughness at the (100)Si/ SiO2 interface is less than a few lattice planes (0.5 nm). When micro-twins are present in the L-SPE layer, almost all of them nucleate at the Si/SiO2 interface. This is evidence for the formation of {111} growth planes near the interface during the L-SPE growth. The twin/SiO2 interface is not parallel to the substrate and forms atomically sharp {111} facets. This fact indicates that the interfacial energy of the (111)Si/SiO2 interface is lower than that of the (100)Si/SiO2 in solid phase.Keywords
This publication has 12 references indexed in Scilit:
- Si/SiO2 interface roughness: Structural observations and electrical consequencesApplied Physics Letters, 1985
- Lateral Solid-Phase Epitaxy of Vacuum-Deposited Amorphous Si Film over Recessed SiO2 PatternsJapanese Journal of Applied Physics, 1985
- On the Mechanisms of Lateral Solid Phase Epitaxial Growth of Amorphous Si Films Evaporated on SiO2 PatternsJapanese Journal of Applied Physics, 1985
- Characterization of Solid-Phase Epitaxially-Grown Silicon Films on SiO2Japanese Journal of Applied Physics, 1984
- Structure of thermally induced microdefects in Czochralski silicon after high-temperature annealingApplied Physics Letters, 1983
- Lateral solid phase epitaxy of amorphous Si films on Si substrates with SiO2 patternsApplied Physics Letters, 1983
- Solid-Phase Lateral Epitaxial Growth onto Adjacent SiO2 Film from Amorphous Silicon Deposited on Single-Crystal Silicon SubstrateJapanese Journal of Applied Physics, 1982
- Some observations on the amorphous to crystalline transformation in siliconJournal of Applied Physics, 1982
- A new technique for observing the amorphous to crystalline transformation in thin surface layers on silicon wafersJournal of Applied Physics, 1980
- A study of nucleation in chemically grown epitaxial silicon films using molecular beam techniques III. Nucleation rate measurements and the effect of oxygen on initial growth behaviourPhilosophical Magazine, 1967