Low temperature proton irradiation of GaAs MESFETs
- 1 December 1993
- journal article
- research article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 40 (6) , 1300-1306
- https://doi.org/10.1109/23.273538
Abstract
GaAs MESFETs and resistors were irradiated with 3 MeV protons at irradiation temperatures (T-IRR ranging from 100 K less than or equal to T-IRR less than or equal to 300 K. It was found that irradiation at T-IRR less than or equal to 225 K was about 2.5 times more effective at degrading the DC electrical parameters of the MESFETs than irradiation at room temperature. Isochronal annealing experiments showed that there was no apparent recovery of the radiation induced degradation for annealing temperatures T-ANNEAL < 225 K. Both the MESFETs and resistors exhibited a broad annealing stage near 270 K. The implications for spaceborne GaAs devices operated at cryogenic temperature are discussed.Keywords
This publication has 15 references indexed in Scilit:
- Proton-induced increase of the penetration depth in a Tl2Ba2Ca1Cu2Ox microstrip resonatorPhysica C: Superconductivity and its Applications, 1993
- Radiation effects in high temperature superconducting films and devices for the NRL high temperature superconductivity space experimentIEEE Transactions on Nuclear Science, 1991
- Temperature dependence of GaAs metal–semiconductor field effect transistor threshold voltageJournal of Vacuum Science & Technology B, 1988
- Neutron radiation effects in GaAs ion-implanted metal-semiconductor field-effect transistorsJournal of Applied Physics, 1988
- Energy Dependence of Proton-Induced Displacement Damage in Gallium ArsenideIEEE Transactions on Nuclear Science, 1987
- Electron velocity in Si and GaAs at very high electric fieldsApplied Physics Letters, 1980
- Radiation Effects in Gaas Junction Field-Effect TransistorsIEEE Transactions on Nuclear Science, 1980
- Fast neutron tolerance of GaAs JFET's operating in the hot electron rangeIEEE Transactions on Electron Devices, 1972
- Recovery of low temperature electron irradiation-induced damage inn-type gaasRadiation Effects, 1970
- Electrical Studies of Low-Temperature Neutron- and Electron-Irradiated Epitaxial n-Type GaAsJournal of Applied Physics, 1969