Recombination centers in electron irradiated GaInP: application to the degradation of space solar cells
- 1 March 2000
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 210 (1-3) , 264-267
- https://doi.org/10.1016/s0022-0248(99)00693-4
Abstract
No abstract availableKeywords
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- Defects in organometallic vapor-phase epitaxy-grown GaInP layersApplied Physics Letters, 1991