Electrical and structural properties of Ga0.51In0.49P/GaAs heterojunctions grown by metalorganic vapor-phase epitaxy
- 1 June 1992
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 60 (22) , 2749-2751
- https://doi.org/10.1063/1.106865
Abstract
Undoped and Se‐doped Ga0.51In0.49P/GaAs single heterojunctions grown by metalorganic vapor‐phase epitaxy (MOVPE) are characterized with deep‐level transient spectroscopy and transmission electron microscopy (TEM). The undoped MOVPE material, grown at 710 °C, is characterized by a deep electron trap with an activation energy that takes values in the range 700–900 meV. Se doping suppresses the formation of this trap when the doping level is higher than 5×1017 cm−3. Furthermore, Se doping suppresses the persistent photoconductivity that is observed in the undoped samples. Finally, analysis with cross‐section TEM reveals that the samples undergo partial spinodal decomposition in a direction nearly vertical to the interface.Keywords
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