Passive Q switching of Nd:YAG lasers by use of bulk semiconductors
- 15 September 1993
- journal article
- Published by Optica Publishing Group in Optics Letters
- Vol. 18 (18) , 1514-1516
- https://doi.org/10.1364/ol.18.001514
Abstract
We report passive Q switching of Nd:YAG lasers with the use of a bulk InGaAsP film, grown on an InP substrate by liquid-phase epitaxy, as an intracavity saturable absorber. The single Q-switched pulse had a maximum energy of 1.65 mJ with a 20-ns duration. The simple technology is easily extendible to any infrared solid-state laser.Keywords
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