Domain misorientation in sublimation grown 4H SiC epitaxial layers
- 30 July 1999
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 61-62, 168-171
- https://doi.org/10.1016/s0921-5107(98)00495-4
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Investigation of domain evolution in sublimation epitaxy of SiCJournal of Crystal Growth, 1998
- High Growth Rate of α-SiC by Sublimation EpitaxyMaterials Science Forum, 1998
- Growth-related structural defects in seeded sublimation-grown SiCDiamond and Related Materials, 1997
- Crystalline imperfections in 4H SiC grown with a seeded Lely methodJournal of Crystal Growth, 1994